High-performance multilayer WSe2 field-effect transistors with carrier type control
نویسندگان
چکیده
منابع مشابه
High-Performance Field-Effect-Transistors on Monolayer WSe2
Monolayer Tungsten Diselenide (WSe2) exhibits tremendous advantages as a channel material for next-generation field-effecttransistors (FETs). This paper reviews the relevant physics and properties of WSe2 and highlights the excellent scalability of monolayer WSe2 for ultra-short channel (sub-5 nm) FETs. The crucial role of metal-WSe2 contacts in determining the performance of monolayer WSe2 FET...
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This work presents a systematic study toward the design and first demonstration of high-performance n-type monolayer tungsten diselenide (WSe2) field effect transistors (FET) by selecting the contact metal based on understanding the physics of contact between metal and monolayer WSe2. Device measurements supported by ab initio density functional theory (DFT) calculations indicate that the d-orb...
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ژورنال
عنوان ژورنال: Nano Research
سال: 2017
ISSN: 1998-0124,1998-0000
DOI: 10.1007/s12274-017-1681-5